NTMS4916N
TYPICAL PERFORMANCE CURVES
25
20
10V
7V
4V
5V
2.8 V
T J = 25 ° C
50
40
V DS ≥ 10 V
15
3.0 V
30
10
2.6 V
20
T J = 125 ° C
5
2.2 V
2.5 V
2.4 V
10
T J = 25 ° C
2.3 V
T J = ? 55 ° C
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
0
1
1.5
2
2.5
3
3.5
4
4.5
0.030
V DS , DRAIN ? TO ? SOURCE VOLTAGE (V)
Figure 1. On ? Region Characteristics
0.01
V GS , GATE ? TO ? SOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
0.025
T J = 25 ° C
I D = 12 A
0.009
T J = 25 ° C
V GS = 4.5 V
0.020
0.015
0.008
0.010
0.007
V GS = 10 V
0.005
0.006
0.000
3
4
5
6
7
8
9
10
0.005
2
4
6
8
10
12
14
16
18
20
22
1.70
V GS , GATE ? TO ? SOURCE VOLTAGE (V)
Figure 3. On ? Resistance vs. Gate ? to ? Source
Voltage
10000
I D, DRAIN CURRENT (A)
Figure 4. On ? Resistance vs. Drain Current and
Gate Voltage
1.60
1.50
1.40
1.30
1.20
1.10
I D = 12 A
V GS = 10 V
1000
V GS = 0 V
T J = 150 ° C
1.00
0.90
0.80
100
T J = 100 ° C
0.70
? 50
? 25
0
25
50
75
100
125
150
10
5
10
15
20
25
30
T J , JUNCTION TEMPERATURE ( ° C)
Figure 5. On ? Resistance Variation with
Temperature
http://onsemi.com
3
V DS , DRAIN ? TO ? SOURCE VOLTAGE (V)
Figure 6. Drain ? to ? Source Leakage Current
vs. Voltage
相关PDF资料
NTMS4917NR2G MOSFET N-CH 30V 10.2A SO8 FL
NTMS4920NR2G MOSFET N-CH 30V 10.6A 8SOIC
NTMS4935NR2G MOSFET N-CH 30V 10A 8SOIC
NTMS4937NR2G MOSFET N-CH 30V 8.6A 8SOIC
NTMS4N01R2G MOSFET N-CH 20V 3.3A 8-SOIC
NTMS5835NLR2G MOSFET N-CH 40V 9.2A 8SOIC
NTMS5838NLR2G MOSFET N-CH 40V 7.5A 8SOIC
NTMS5P02R2SG MOSFET P-CH 20V 3.95A 8SOIC
相关代理商/技术参数
NTMS4917N 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 10.5 A, N?Channel, SO?8 Low RDS(on) to Minimize Conduction Losses
NTMS4917NR2G 功能描述:MOSFET NFET SO8 30V 10.2A 11MOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTMS4920N 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 17 A, N−Channel, SO−8
NTMS4920NR2G 功能描述:MOSFET 30V 136A 4.3 mOhm Single N-Chan SO-8 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTMS4935N 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 16 A, N−Channel, SO−8
NTMS4935NR2G 功能描述:MOSFET Power MOSFET 30V 126A 5.1 mOhm Single RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTMS4937N 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET Power MOSFET
NTMS4937NR2G 功能描述:MOSFET Power MOSFET 30V 112A 6.5 mOhm Single RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube